Search results for "Gate voltage"

showing 2 items of 2 documents

Single electron transistor fabricated on heavily doped silicon-on-insulator substrate

2001

Experiments on side-gated silicon single electron transistors (SET) fabricated on a heavily doped thin silicon-on-insulator substrate are reported. Some of the devices showed single-island-like and some multi-island-like behaviour, but the properties of individual samples changed with time. Single-electron gate modulation was observable up to T=100 K, at least. A slow response of SET current to a large change in gate voltage was observed, but the process speeded up under illumination.

Materials scienceSiliconbusiness.industryTransistorDopingGeneral EngineeringGeneral Physics and AstronomySilicon on insulatorCoulomb blockadechemistry.chemical_elementNanotechnologySubstrate (electronics)Hardware_PERFORMANCEANDRELIABILITYGate voltagelaw.inventionchemistryModulationlawHardware_INTEGRATEDCIRCUITSOptoelectronicsbusinessHardware_LOGICDESIGNJapanese Journal of Applied Physics
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SEGR in SiO${}_2$–Si$_3$N$_4$ Stacks

2014

Abstract. This work presents experimental Single Event Gate Rupture (SEGR) data for Metal–Insulator–Semiconductor (MIS) devices, where the gate dielectrics are made of stacked SiO2–Si3N4 structures. A semi-empirical model for predicting the critical gate voltage in these structures under heavy-ion exposure is first proposed. Then interrelationship between SEGR cross- section and heavy-ion induced energy deposition probability in thin dielectric layers is discussed. Qualitative connection between the energy deposition in the dielectric and the SEGR is proposed. peerReviewed

PhysicsNuclear and High Energy Physicsta114Condensed matter physicsbusiness.industrymodelingDielectricMOSGate voltageSingle Event Gate Rupture (SEGR)Nuclear Energy and EngineeringOptoelectronicsElectrical and Electronic Engineeringbusinesssemi-empiricalDeposition (law)IEEE Transactions on Nuclear Science
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